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  Datasheet File OCR Text:
 UTC 2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
FEATURES
*Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to 2SA1015
1
TO-92
1:EMITTER 2:COLLECTOR 3. BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )
PARAMETER
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation(Ta=25C) Collector current Base current Junction Temperature Storage Temperature
SYMBOL
VCBO VCEO VEBO Pc Ic IB Tj TSTG
RATING
60 50 5 400 150 50 125 -55 ~ +150
UNIT
V V V mW mA mA C C
ELECTRICAL CHARACTERISTICS(Ta=25C,unless otherwise specified)
Parameter
Collector cut-off current Emitter cut-off current DC current gain(note) Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance Noise Figure
Symbol
ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob NF
Test conditions
VCB=60V,IE=0 VEB=5V,Ic=0 VCE=6V,Ic=2mA VCE=6V,Ic=150mA Ic=100mA,IB=10mA Ic=100mA,IB=10mA VCE=10V,Ic=50mA VCB=10V,IE=0,f=1MHz Ic=-0.1mA,VCE=6V RG=10k,f=100Hz
MIN
TYP
MAX
100 100 700
UNIT
nA nA
70 25 0.1 80 2.0 1.0
0.25 1.0 3.0 1.0
V V MHz pF dB
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-006,A
UTC 2SC1815
RANK RANGE
NPN EPITAXIAL SILICON TRANSISTOR
Y 120-240 G 200-400 L 350-700
CLASSIFICATION OF hFE1
TYPICAL CHARACTERISTIC CURVES
Fig.1 Static characteristics
100 3 10
Fig.2 DC current Gain
2 10
Fig.3 Base-Emitter on Voltage
Ic,Collector current (mA)
HFE, DC current Gain
80
Ic,Collector current (mA)
VCE=6V IB=300 A
2 10
1 10
VCE=6V
60
IB=250 A
40
IB=200 A IB=150 A
1 10
0 10
20
IB=100 A IB=50 A
0 4 8 12 16 20
0
0 10
-1 10
0 10
1 10
2 10
3 10
-1 10 0 0.2 0.4 0.6 0.8 1.0
Collector-Emitter voltage ( V)
Ic,Collector current (mA)
Base-Emitter voltage (V)
Fig.4 Saturation voltage
4 10 3 10
Fig.5 Current gain-bandwidth product
2 10
Fig.6 Collector output Capacitance
Cob,Capacitance (pF)
Saturation voltage (mV)
Ic=10*IB
Current Gain-bandwidth product,fT(MHz)
VCE=6V
2 10
3 10
VBE(sat)
1 10
f=1MHz IE=0
2 10
VCE(sat)
1 10
0 10
1 10
-1 10
0 10
1 10
2 10
3 10
0 10
-1 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 10
Ic,Collector current (mA)
Ic,Collector current (mA)
Collector-Base voltage (V)
UTC
UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-006,A


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